TypeNo.DataSheetAvailability StatusOutput Power at 1dB Gain Compression(dBm)PoLinear Power Gain(dB)3rd Order IM Distortion(dBc)Power Added Efficiency(%)Frequency (GHz)Drain-Source Voltage(V)Drain Current(A)Inverter cir thermal resistanceS-parameterMGFC40V5964(4/01/2003, 247KB)MP39.5(min) 40.5(typ)-8.0(min)-42.0(min) -49.0(typ)30.05.9~6.410.02.4-mgfc40v5964.s2p
MGFC40V5964 |
RFQ for MGFC40V5964 |
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| Product | Manufacturers | Pack | D/C | |||||||||||||
| MGFC40V5964 | - | - | - |
The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
Typical Application |
Features |
| ·item 01 : 5.9~6.4 GHz band power amplifier·item 51 : 5.9~6.4 GHz band digital radio communication | ·Class A operation·Internally matched to 50(ohm) system·High output power P1dB = 10W (TYP.) @ f=5.9~6.4GHz·High power gain GLP = 10 dB (TYP.) @ f=5.9~6.4GHz·High power added efficiency P.A.E. = 30 % (TYP.) @ f=5.9~6.4GHz·Low distortion [ item -51 ] IM3= -49 dBc(TYP.) @Po=29(dBm) S.C.L. |
| Symbol |
Parameter |
Ratings |
Unit |
| VGDO VGSO ID IGR IGF PT Tch Tstg |
Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation *1 Channel temperature Storage temperature |
-15 -15 7.5 -20 42 42.8 175 -65 / +175 |
V V A mA mA W deg.C deg.C |